EPC’s first seventh-generation eGaN® device enters mass production, delivering up to 3× better performance than silicon ...

Cree, one of the market leaders in silicon carbide (SiC) power electronics, introduced new Wolfspeed 650V SiC MOSFETs, which are envisioned for applications where efficiency is a key priority, ...

Infineon says its silicon carbide power semiconductors have been selected for Toyota’s new bZ4X battery-electric vehicle.

Wide-bandgap (WBG) technologies, such as gallium-nitride (GaN) devices and silicon-carbide (SiC) MOSFETs, have recently made their way to electrified powertrain (e-powertrain) applications. These ...

An advanced gate design could reshape EV and data center power systems.

The use of supercapacitor series stacks are growing for many systems used in backup power storage or battery life extension. One of the most critical circuit design goals for such systems is ...

In the wake of gallium-nitride (GaN) transistor introductions, a number of semiconductor makers have begun to reassess the role played by conventional MOSFETs. The introduction of GaN devices doesn’t ...

Alpha and Omega Semiconductor unveils 600V Super Junction MOSFET platform, expanding its high‑voltage power portfolio.

SUNNYVALE, Calif.--(BUSINESS WIRE)--Alpha and Omega Semiconductor Limited (AOS) (Nasdaq: AOSL) a designer, developer, and global supplier of a broad range of discrete power devices, wide bandgap power ...

iDEAL Semiconductor's SuperQ technology has entered full production, with the first products being 150V MOSFETs. A family of 200V MOSFETs is sampling. SuperQ is the first significant advance in ...

Today's motors are increasingly driven via electronic controls, which offer better control of speed, position, and torque, as well as much greater efficiency, rather than via direct connection to ...

Problem: your electronic load works fine, except for the occasional MOSFET bursting into flames. Solution: do what [tbladykas] did, and build a water-cooled electronic load. One can quibble that ...