Abstract: A 2-mercaptobutanedioic acid modified enhancement-mode AlGaN/GaN high-electron-mobility transistor (HEMT) device with a 5-fold gate was proposed for Fe3+ specific detection. The crystal ...
Talent mobility is not just about individual ambition; it is an economic engine that can redefine India’s global position. If harnessed well, the cross-border movement of skilled and semi-skilled ...